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15 GHz fmax microwave silicon p-n- rho transistors with single-crystal emitters fabricated with simple four mask process

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4 Author(s)
Hebert, F. ; Adv. Bipolar Products, AV ANTEK Inc., Newark, CA, USA ; Wholey, J. ; Snapp, C. ; Garcia, A.

Vertical p-n- rho transistors have been fabricated using a four mask, low cost quasi-selfaligned process with submicrometre feature sizes. The resulting monocrystalline emitter devices achieve ft greater than 9 GHz and fmax greater than 15 GHz with BVceo greater than 13 V. These discrete p-n- rho 's were used successfully as active loads for a monolithic n- rho -n opamp to achieve a gain-bandwidth product of 4.4 GHz.

Published in:

Electronics Letters  (Volume:27 ,  Issue: 20 )