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Linearised InGaP/GaAs HBT MMIC power amplifier with active bias circuit for W-CDMA application

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2 Author(s)
Y. S. Noh ; Sch. of Eng., Inf. & Commun. Univ., Taejon, South Korea ; C. S. Park

A high linearity InGaP/GaAs heterojunction bipolar transistor (HBT) monolithic microwave integrated circuit (MMIC) power amplifier is demonstrated using a new structure for a bias circuit for wideband-code division multiple access (W-CDMA) application. A one shunt capacitor is added to a novel active bias circuit and acts as a lineariser improving input P1 dB of 16 dB and phase distortion of 5.1° for the hybrid phase shift keying (HPSK) modulated signal at the 28 dBm output power; the lineariser showing no significant increase of signal loss and chip area. The two-stage HBT MMIC amplifier exhibits a power-added efficiency (PAE) of 37%, a linear power gain of 24.5 dB, and an output power of 28 dBm with an adjacent channel power ratio (ACPR) of -45 dBc, under a 3 V operation voltage

Published in:

Electronics Letters  (Volume:37 ,  Issue: 25 )