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Exact resolution of coupled Schrodinger-Poisson equation: application to accurate determination of potential profile in HEMTs

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4 Author(s)
M. Benabbas ; ENSEEIHT-Groupe de Recherche Microondes, Toulouse, France ; B. Marir ; D. Bajon ; H. Baudrand

An exact solution of a combination of the nonlinear Schrodinger and Poisson equations is presented for the study of potential energy and carrier distributions at the interface of a single heterojunction. The shapes of the wave function and the potential (i.e. conduction band bending) are not required to be known a priori and are calculated from the doping rates and energy gaps on both sides of the heterojunction.

Published in:

Electronics Letters  (Volume:27 ,  Issue: 20 )