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Variable-gain power amplifier for mobile WCDMA applications

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4 Author(s)
V. T. S. Vintola ; Nokia Mobile Phones, Helsinki, Finland ; M. J. Matilainen ; S. J. K. Kalajo ; E. A. Jarvinen

A single-chip linear power amplifier (PA) with >48-dB gain control range and >24-dBm output power with adjacent channel leakage power below -36 dBc is presented. The chip is realized using an AlGaAs-GaAs heterojunction-bipolar-transistor process and is aimed for 1.95-GHz mobile WCDMA applications. The amplifier consists of two blocks, the variable-gain amplifier, and the PA. The chip size is 1.3×1.1 mm2 and it is mounted on an 8×8 mm2 FR-4 type laminate with 26 pieces of 0402 surface-mountable discrete components composing a complete 50-Ω input-output amplifier module. This paper presents the design of the two blocks, discusses issues related to their combination, and presents complete amplifier realization and measurement results

Published in:

IEEE Transactions on Microwave Theory and Techniques  (Volume:49 ,  Issue: 12 )