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High-isolation series-shunt FET SPDT switch with a capacitor canceling FET parasitic inductance

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7 Author(s)
Hieda, M. ; Inf. Technol. Res. & Dev., Mitsubishi Electr. Corp., Kamakura, Japan ; Nakahara, K. ; Miyaguchi, K. ; Kurusu, H.
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A novel series-shunt FET narrow-band high-isolation single-pole double-throw switch, which employs series capacitors to cancel the parasitic inductances has been developed. The proposed switch can have significantly high isolation characteristics at higher frequency. The fabricated two switches have demonstrated high isolation characteristics of 28.9 dB in the 28- and 18-GHz band, respectively

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Microwave Theory and Techniques, IEEE Transactions on  (Volume:49 ,  Issue: 12 )