Microwave noise and power performance of metamorphic InP heterojunction bipolar transistors

For the first time, microwave noise and power performance of metamorphic InP heterojunction bipolar transistors (MM-HBTs) grown on GaAs substrates are reported. We find that microwave performance of MM-HBTs is comparable to that of lattice-matched InP heterojunction bipolar transistors of identical design. The preliminary results imply that the superior performance of InP heterojunction bipolar transistors can be confidently exploited with the more mature manufacturing technology of GaAs.