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Investigation into intermodulation distortion in HEMTs using a quasi-2-D physical model

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4 Author(s)
Rudge, P.J. ; Inst. of Microwaves & Photonics, Leeds Univ., UK ; Miles, Robert E. ; Steer, M.B. ; Snowden, Christopher M.

The need for both linear and efficient pseudomorphic high electron-mobility transistors (pHEMTs) for modern wireless handsets necessitates a thorough understanding of the origins of intermodulation distortion at the device level. For the first time, the dynamic large-signal internal physical behavior of a pHEMT is examined using a quasi-two-dimensional physical device model. The model accounts fully for device-circuit interaction and is validated experimentally for a two-tone experiment around 5 GHz

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Microwave Theory and Techniques, IEEE Transactions on  (Volume:49 ,  Issue: 12 )