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Low threshold current density operation (J/sub th/ = 340A/cm/sup 2/) of GaInNAs/GaAs quantum well lasers grown by metalorganic chemical vapor deposition

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6 Author(s)
M. Kawaguchi ; Tokyo Inst. of Technol., Yokohama, Japan ; T. Miyamoto ; E. Gouardes ; T. Kondo
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We have achieved the lowest threshold current density of 340 A/cm/sup 2/ with a high characteristic temperature of over 200 K in 1.25 /spl mu/m GaInNAs/GaAs lasers grown by MOCVD. A threshold current density per well of 170 A/cm/sup 2/ is the record low value for 1.2/spl sim/1.3 /spl mu/m GaInNAs lasers.

Published in:

Lasers and Electro-Optics, 2001. CLEO/Pacific Rim 2001. The 4th Pacific Rim Conference on  (Volume:2 )

Date of Conference:

15-19 July 2001