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High-mobility poly-Si TFTs fabricated in low temperature process are required for the next generation of active-matrix liquid-crystal displays (AMLCDs). The mobility of poly-Si TFT exceeds that of the conventional a-Si TFT active device by two orders of magnitude, permitting integration of peripheral devices circuits and increased aperture. With optimized excimer laser annealing process condition, we have successfully fabricated low temperature poly-Si TFT on glass and plastic substrates.
Lasers and Electro-Optics, 2001. CLEO/Pacific Rim 2001. The 4th Pacific Rim Conference on (Volume:2 )
Date of Conference: 15-19 July 2001