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Numerical modeling of intensity and phase noise in semiconductor lasers

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3 Author(s)
M. Ahmed ; Electr. & Electron. Eng. Dept., Kanazawa Univ., Japan ; M. Yamada ; M. Saito

A self-consistent numerical approach is demonstrated to analyze intensity and phase noise in semiconductor lasers. The approach takes into account the intrinsic fluctuations of the photon number, carrier number, and phase. A new systematic technique is proposed to generate the Langevin noise sources that derive the laser rate equations keeping their cross-correlations satisfied. The simulation is applied to AlGaAs lasers operating in a single mode. The time-varying profiles of the fluctuating photon and carrier numbers and the instantaneous shift of the oscillating frequency are presented. Statistical analysis of the intensity and phase fluctuations is given. The frequency spectra of intensity and phase noise are calculated with help of the fast Fourier transform. The importance of taking into account the carrier number noise source and its cross-correlation with the noise source on the phase is examined by comparing our results with those by conventional methods

Published in:

IEEE Journal of Quantum Electronics  (Volume:37 ,  Issue: 12 )