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Recessed 0.25 μm gate AlGaN/GaN HEMTs on SiC with high gate-drain breakdown voltage using ICP-RIE

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6 Author(s)
V. Kumar ; Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA ; W. Lu ; F. A. Khan ; R. Schwindt
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Using inductively coupled plasma reactive ion etching (ICP-RIE), recessed 0.25 μm gate-length AlGaN/GaN high electron mobility transistors (HEMTs) have been fabricated. A post-etch anneal eliminated the plasma-induced damage resulting in an improvement of the gate-drain breakdown voltage from -27 V for the as-etched to over -90 V for the annealed devices. The gate leakage current reduced from 91 to 4 μA at Vgd = -25 V, after annealing. These devices exhibited maximum drain current density of 770 mA/mm, unity gain cutoff frequency (fT ) of 48 GHz, and maximum frequency of oscillation (fmax) of 108 GHz

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Electronics Letters  (Volume:37 ,  Issue: 24 )