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De-embedded ultra-low noise 0.1 μm gate length Ge/Si0.4 Ge0.6 p-MODFET

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7 Author(s)
Enciso-Aguilar, M. ; Fundamental Inst. of Electron., Univ. de Paris-Sud, Orsay, France ; Aniel, F. ; Crozat, P. ; Adde, R.
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De-embedded high frequency (HF) noise parameters of Ge p-channel modulation doped field effect transistors (MODFETs) on a Si0.4Ge0.6 virtual substrate have been determined for the first time. The 0.1 × 100μm devices have a minimum noise figure NFmin = 0.3 dB (0.5dB) ± 0.2dB, a noise resistance Rn = 95 Ω (90 Ω) ± 5 Ω, an optimum reflection coefficient Γopt = 0.7 ∠ 6° and an associated gain Gass = 14 dB (13 dB) at 1.2 GHz (2.5 GHz), at a bias corresponding to the optimum unity current-gain frequency fT = 55GHz and the maximum oscillation frequency f MAX = 135GHz. Noise results are given in the 1.2-12GHz frequency range and 20-160 mA/mm current range

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Electronics Letters  (Volume:37 ,  Issue: 24 )