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Monolithic fabrication of 2 /spl times/ 2 crosspoint switches in InGaAs-InAlGaAs multiple quantum wells using quantum-well intermixing

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8 Author(s)
B. C. Qiu ; Dept. of Electron. & Electr. Eng., Glasgow Univ., UK ; X. F. Liu ; M. L. Ke ; H. K. Lee
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In this letter, we report the fabrication of 2 /spl times/ 2 crosspoint switches, which monolithically integrate passive waveguides, electro-absorption modulators and optical amplifiers onto one chip using sputtered SiO/sub 2/ quantum-well intermixing technique. The switches have low insertion loss to be about 4-5 dB and extinction ratios up to 26 dB.

Published in:

IEEE Photonics Technology Letters  (Volume:13 ,  Issue: 12 )