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Phototransceiver arrays with phototransistors and resonant cavity light emitting diodes vertically integrated with tunnel junctions

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5 Author(s)
Zhou, W.D. ; Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA ; Pradhan, S. ; Bhattacharya, P. ; Liu, W.K.
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Summary form only given. We report here GaAs-based low, power phototransceivers and phototransceiver arrays with vertically integrated resonant cavity LEDs (RCLEDs) and heterojunction phototransistors (HPTs). A novel integration scheme, based on a tunnel junction (TJ) ensures the simple processing, compact size and excellent performance of the arrays

Published in:

Lasers and Electro-Optics Society, 2001. LEOS 2001. The 14th Annual Meeting of the IEEE  (Volume:2 )

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