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Over 100 mW high power operation of 1625 nm L-band DFB laser diodes

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6 Author(s)
Kise, T. ; Yokohama R&D Labs., Furukawa Electr. Co. Ltd., Yokohama, Japan ; Hiraiwa, K. ; Koizumi, S. ; Yamanaka, N.
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Summary form only given. We demonstrate high power L-band DFB laser diodes with an output power over 100mW even at the wavelength of 1625nm. To suppress further degradation of temperature characteristics, we adjust carrier confinement conditions, still keeping high slope efficiency. We also investigate wavelength dependence of characteristic temperature of threshold current over C- and L-band wavelength region. The active region of the fabricated laser is composed of a strain-compensated InGaAsP MQW-SCH

Published in:

Lasers and Electro-Optics Society, 2001. LEOS 2001. The 14th Annual Meeting of the IEEE  (Volume:2 )

Date of Conference:

2001