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Direct generation of 1.5 μm, 2.1 ps pulses at 10 GHz from an actively modelocked fiber laser using a monolithic semiconductor optical amplifier and electroabsorption modulator device

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5 Author(s)
Roth, J.M. ; Dept. of Electr. Eng., Princeton Univ., NJ, USA ; Dreyer, K. ; Collings, B. ; Knox, W.
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We present a simple and robust ring cavity design that relies on a single monolithically integrated semiconductor optical amplifier and 10 GB/s electroabsorption modulator (EAM) to provide both the gain and modelocking mechanisms for the laser. Small perturbations to the large reverse bias voltage applied to the EAM allow for about 2 ppm tunability of the rep rate of the cavity. About 10 dB of isolation is provided by the directional difference in net saturated gain of the device

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Lasers and Electro-Optics Society, 2001. LEOS 2001. The 14th Annual Meeting of the IEEE  (Volume:2 )

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