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Improved crystallinity of GaInNAs by additional rapid thermal annealing (RTA)

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5 Author(s)
M. Kondow ; RWCP Optoelectronics Hitachi Lab., Hitachi Ltd., Tokyo, Japan ; T. Kitatani ; M. Aoki ; S. Nakatsuka
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We found that additional RTA at around 750 C greatly increases the photoluminescence (PL) intensity of solid-source MBE grown GaInNAs, while a relatively low in-situ annealing temperature, i.e., growth temperature for the p-Al0.3Ga0.7As cladding layer, at around 600 C is enough to improve the crystallinity of GaInNAs if additional RTA is performed. Consequently, a 10-Gb/s operation of a GaInNAs edge-emitting laser was achieved above 70 C

Published in:

Lasers and Electro-Optics Society, 2001. LEOS 2001. The 14th Annual Meeting of the IEEE  (Volume:2 )

Date of Conference:

2001