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1.1-1.2 μm multiple-wavelength vertical cavity surface emitting laser array with highly strained GaInAs/GaAs QWs on patterned substrate

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7 Author(s)
Arai, M. ; Microsystem Res. Center, Tokyo Inst. of Technol., Yokohama, Japan ; Kondo, T. ; Nishiyama, N. ; Matsutani, A.
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We demonstrated a single-mode multiple wavelength VCSEL array with highly strained GaInAs/GaAs QWs on a patterned GaAs substrate in the new wavelength band of 1.1-1.2 μm. The emission wavelength of a 16-channel array ranges from 1116 nm to 1154 nm. By using this technique, the wavelength span of the multi-wavelength GaInAs/GaAs VCSEL can be expanded and we can expect a wideband WDM-LAN using the VCSEL array

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Lasers and Electro-Optics Society, 2001. LEOS 2001. The 14th Annual Meeting of the IEEE  (Volume:2 )

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