By Topic

High-performance 1.3-μm VCSELs with GaAsSb/GaAs quantum wells

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

7 Author(s)
Yamada, Mitsuki ; Opt. Interconnection NEC Lab., NEC Corp., Ibaraki, Japan ; Anan, T. ; Kurihara, K. ; Nishi, Kenichi
more authors

We have demonstrated CW and high-speed performance of GaAsSb/GaAs VCSELs lasing at a wavelength of longer than 1.27 μm. 1.295 μm lasing was achieved with a threshold of 1.1 mA. Single-mode output of 0.46 mW, and 4.5-GHz bandwidth was obtained at 1.27 μm. Thus, GaAsSb/GaAs VCSELs should be viable low-cost light sources for high-capacity optical fiber systems

Published in:

Lasers and Electro-Optics Society, 2001. LEOS 2001. The 14th Annual Meeting of the IEEE  (Volume:2 )

Date of Conference: