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We present an accurate analytical expression to compute power and delay of domino CMOS circuits from a detailed description of internal capacitor switching and discharging currents. The expression obtained accounts for the main effects in complex sub-micron gates like velocity saturation effects, body effect, device sizes and coupling capacitors. The energy-delay product is also evaluated and analyzed. Results are compared to HSPICE simulations (level 50) for a 0.18 /spl mu/m CMOS technology.