Referenced Items are not available for this document.
The effect of the presence of the electrically floating gate on the bipolar operation of a silicon on insulator metal-oxide-semiconductor field effect transistor (MOSFET) is experimentally investigated. The emitter injection efficiency is shown to be enhanced by the floating gate, the work function of which depletes the base (body) majority carrier from the channel region
Published in:
Electronics Letters
(Volume:37
,
Issue:
21
)
Date of Publication: 11 Oct 2001
- Page(s):
- 1313 - 1314
- ISSN :
- 0013-5194
- INSPEC Accession Number:
- 7088611
- Digital Object Identifier :
- 10.1049/el:20010881
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 07 August 2002
- Issue Date :
- 11 Oct 2001
- Sponsored by :
- Institution of Engineering and Technology
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