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Browse Conference Publications > Gate Insulator, 2001. IWGI 20 ... Help

Local electrical properties of HfO2 thin films measured by conducting atomic force microscopy

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7 Author(s)
Goto, T. ; Dept. of Crystalline Mater. Sci., Nagoya Univ., Japan ; Sakashita, Shinsuke ; Ikeda, H. ; Sakashita, Mitsuo
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In this work, we investigated the local leakage characteristics of HfO/sub 2/ thin films, using conducting atomic force microscopy (C-AFM) and discussed the relationship between the surface morphology and the local leakage current microscopically.

Published in:
Gate Insulator, 2001. IWGI 2001. Extended Abstracts of International Workshop on

Date of Conference: 1-2 Nov. 2001

Page(s):
180 - 183
Meeting Date :
01 Nov 2001-02 Nov 2001
Print ISBN:
4-89114-021-6
INSPEC Accession Number:
7204785
Conference Location :
Tokyo, Japan
Digital Object Identifier :
10.1109/IWGI.2001.967578
Product Type:
Conference Publications

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