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A study of the CoolMOS integral diode: analysis and optimisation

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4 Author(s)

This paper examines the internal carrier dynamics during reverse recovery of the integral diode present in the CoolMOS FET. The physical processes occurring within the device allows identification of the factors influencing the recovery/transient characteristics of the integral diode. It is also observed that a trade-off exists between the specific on-resistance and the softness of the diode

Published in:

Semiconductor Conference, 2001. CAS 2001 Proceedings. International  (Volume:2 )

Date of Conference:

Oct 2001