By Topic

Low temperature bonding techniques for MEMS applications

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Dunare, C. ; Dept. of Electron. & Electr. Eng., Edinburgh Univ., UK ; Stevenson, T. ; Gundlach, A. ; Walton, A.
more authors

Direct bonding of two mirror-polished wafers, without any external applied energy and at low temperature, is an attractive technique for the new generation of ICs, due to the flexibility that the technique offers. This technique can be used for advanced CMOS applications and for MEMS ones, that are MOS compatible. The bonded structure can be obtained using wet or dry activation techniques. The aim of the paper is to provide a method that assures pairs of bonded wafers in case of using a normal thick wafer (~300 μm) and a thin one (less than 100 μm)

Published in:

Semiconductor Conference, 2001. CAS 2001 Proceedings. International  (Volume:2 )

Date of Conference:

Oct 2001