By Topic

New radiation sensors based on SRO/Si junction

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
M. Aceves ; Departamento de Electronica, Instituto Nacional de Astrofisica, Opt. y Electron., Puebla, Mexico ; A. Malik ; J. Carillo ; S. Alcantara

Silicon rich oxide (SRO), or off stoichiometry silicon oxide, has been studied from several perspectives. The SRO is a double phase material formed by silicon islands embedded in a SiO2 matrix, whose final characteristics are related to the silicon excess. The silicon excess is determined by the gas precursor ratio, Ro. For Ro higher than 50 a stoichiometric oxide is obtained, while for Ro=3 the excess silicon is around 17%. SRO can also be obtained by silicon implantation into thermal silicon oxide. We have studied the electronic behavior of the Al/SRO/Si structure. With this knowledge, we have proposed new radiation sensors that use the SRO/Si junction. In this paper, we present some details and experimental results of such devices

Published in:

Semiconductor Conference, 2001. CAS 2001 Proceedings. International  (Volume:2 )

Date of Conference:

Oct 2001