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Current-voltage characteristics of electron irradiated polycrystalline Au/CdSe/Au thin layers

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6 Author(s)

Polycrystalline thin CdSe layers, obtained by thermal-vacuum deposition on glass substrate at temperature of 220°C, were subjected to two consecutive sessions of irradiation with 7 MeV electrons to fluences of 2 × 1015 and 4 × 1015 electrons/cm2, respectively. After irradiation, the electrical properties of polycrystalline thin CdSe films, sandwiched between two gold electrodes, were investigated by current voltage measurements. Under low-voltages, Ohm's law is followed with an electron mobility μ of 52 cm2V-1 s-1 and a room temperature electrical conductivity σ 0 of 4,627 × 10-5 Ω-1 cm -1. At high-applied voltages, there is a space-charge limited conductivity (SCLC) controlled by an uniform trap distribution with density per unit energy range ρ(E) of 2.39 × 1014 cm-3 eV-1

Published in:

Semiconductor Conference, 2001. CAS 2001 Proceedings. International  (Volume:2 )

Date of Conference:

Oct 2001