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Study of the conductivity in MIS structures with sol-gel TiO2 dielectric films

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5 Author(s)
Simeonov, S. ; Inst. of Solid State Phys., Sofia, Bulgaria ; Kafedjiiska, E. ; Szekeres, A. ; Parlog, C.
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The conductivity in sol-gel TiO2 films deposited on n-Si was characterized by current-voltage measurements in a wide temperature range of 88-291 K. The results suggest that the conduction mechanism is the transport of electrons from the residual donors through the conduction band of TiO2

Published in:

Semiconductor Conference, 2001. CAS 2001 Proceedings. International  (Volume:2 )

Date of Conference:

Oct 2001

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