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Silicon light emitting devices in standard CMOS technology

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3 Author(s)
du Plessis, M. ; Carl & Emily Fuchs Inst. for Microelectron., Pretoria Univ., South Africa ; Aharoni, H. ; Snyman, Lukas W.

Photon emission from reverse biased silicon pn junctions was reported for the first time in 1955. However, Si-LED's will only find applications if they can be fully integrated with standard silicon integrated circuits, and several attempts have been made in this regard. This paper discusses the characteristics and design of silicon light emitting devices in standard CMOS technology with no process modifications

Published in:

Semiconductor Conference, 2001. CAS 2001 Proceedings. International  (Volume:1 )

Date of Conference:

2001