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MOS varactors with ferroelectric films

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4 Author(s)
Gevorgian, S. ; Dept. of Microelectron., Chalmers Univ. of Technol., Goteborg, Sweden ; Abadei, S. ; Berg, H. ; Jacobsson, H.

The microwave performance of MOS varactors with additional ferroelectric film (MFOS) is presented. The tunability of MFOS varactors above 20 GHz is more than 10% higher than that of simple MOS varactors, with sufficiently high Q factor. The proposed MFOS varactor has a simple design and is compatible with standard CMOS processes. It may have symmetric C-V curves at rather high tuning voltages and superior performance at millimetre wave frequencies. In experiments varactors are based on NaNbO/sub 3/ films grown on high resistivity silicon substrates.

Published in:

Microwave Symposium Digest, 2001 IEEE MTT-S International  (Volume:2 )

Date of Conference:

20-24 May 2001