Referenced Items are not available for this document.
In this paper, we present a highly integrated low-power direct conversion receiver MMIC for broadband wireless applications at C-band. This receiver chip is fabricated in a 0.6 /spl mu/m commercial GaAs MESFET process and operates on only 90 mW of dc power consumption. Using an integrated switched LNA and direct-coupled baseband amplifiers, this receiver demonstrates a conversion gain of 25 dB, NF of 6.7 dB, dc offset below -70 dBm, IIP2 of +20 dBm, and IIP3 of -15 dBm in the high-gain mode and +15 dBm in the low-gain mode at 5.8 GHz.
Published in:
Microwave Symposium Digest, 2001 IEEE MTT-S International
(Volume:2
)
Date of Conference: 20-24 May 2001
- Page(s):
- 1089 - 1091 vol.2
- Meeting Date :
- 20 May 2001-25 May 2001
- ISSN :
- 0149-645X
- Print ISBN:
- 0-7803-6538-0
- INSPEC Accession Number:
- 7011975
- Conference Location :
- Phoenix, AZ, USA
- Digital Object Identifier :
- 10.1109/MWSYM.2001.967081
- Product Type:
- Conference Publications
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