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Analysis of signal integrity in high-speed digital ICs, by combining MOSFET modeling and the LE-FDTD method

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6 Author(s)
F. Alimenti ; Dipt. di Ingegneria Elettronica e dell'Inf., Perugia Univ., Italy ; G. Stopponi ; P. Placidi ; P. Ciampolini
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For the reliable design of high-speed digital integrated circuits, signal integrity analysis of the critical interconnection lines needs to be performed. Such an analysis should account for electromagnetic effects (propagation, impedance mismatch, cross-talk and substrate losses) as well as for the nonlinear behavior of the active circuitry. This work proposes a comprehensive approach to carry-out the above analysis. In particular, an accurate MOSFET analytical model, suitable for advanced submicrometric microelectronic technologies, has been incorporated in a full-wave simulator based on the Lumped Element Finite Difference Time Domain (LE-FDTD) method. In this abstract, discretization and implementation procedures are discussed, and some preliminary simulations, aimed at validating the approach, are presented.

Published in:

Microwave Symposium Digest, 2001 IEEE MTT-S International  (Volume:2 )

Date of Conference:

20-24 May 2001