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Suppression of parasitic substrate modes in flip-chip packaged coplanar W-band amplifier MMICs

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5 Author(s)
A. Tessmann ; Fraunhofer Inst. for Appl. Solid State Phys., Freiburg, Germany ; W. H. Haydl ; T. v. Kerssenbrock ; P. Heide
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In this work, we describe the impact of different mounting configurations for flip-chip assemblies of W-band millimeter-wave integrated circuits. Coplanar 94 GHz amplifiers with high gain have been flip-chip mounted on both, semi-insulating (s.i.) GaAs and n-type doped silicon (n-Si) carriers. The influence of carrier thickness and conductivity on the isolation between the input and output port was investigated to minimize the power leakage into parasitic modes in the flip-chip substrate. The use of lossy n-Si substrates resulted in a significant reduction of feedback and crosstalk effects, and thus an unconditional stable operation of the flip-chip packaged W-band amplifier MMICs was achieved.

Published in:

Microwave Symposium Digest, 2001 IEEE MTT-S International  (Volume:1 )

Date of Conference:

20-24 May 2001