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Highly linear CMOS RF MMIC amplifier using multiple gated transistors and its Volterra series analysis

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3 Author(s)
Kim, B. ; Dept. of Electr. Eng. & Comput. Sci., Korea Adv. Inst. of Sci. & Technol., Taejon, South Korea ; Jin-Su Ko ; Lee, K.

CMOS RF MMIC amplifiers are fabricated with linearization technique using multiple gated transistors. At 900 MHz, double and triple gated amplifiers show 2.5-4.5 dB larger figure of merit (linearity-DC power consumption), which means that only 1/2/spl sim/1/3 of DC power is needed to obtain the same OIP/sub 3/ value. Using Volterra series analysis and harmonic balance simulation, it is shown that the linearization technique with the 2nd harmonic termination can increase IIP/sub 3/ by amount of 16 dB max. without additional DC power consumption at optimal bias condition, which can reduce more than 90% of DC power consumption with the same linearity performance.

Published in:

Microwave Symposium Digest, 2001 IEEE MTT-S International  (Volume:1 )

Date of Conference:

20-24 May 2001

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