Referenced Items are not available for this document.
We present microwave inductors of 1.5 to 2.5 nH fabricated out-of-plane by a self-assembly process. The consequent de-coupling from the substrate allows improved Q (from 4 to 20) and frequency of maximum Q (from 0.5 GHz to 3 GHz) on low resistivity silicon substrates.
Published in:
Microwave Symposium Digest, 2001 IEEE MTT-S International
(Volume:1
)
Date of Conference: 20-24 May 2001
- Page(s):
- 329 - 332 vol.1
- Meeting Date :
- 20 May 2001-25 May 2001
- ISSN :
- 0149-645X
- Print ISBN:
- 0-7803-6538-0
- INSPEC Accession Number:
- 6985104
- Conference Location :
- Phoenix, AZ, USA
- Digital Object Identifier :
- 10.1109/MWSYM.2001.966899
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