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We present microwave inductors of 1.5 to 2.5 nH fabricated out-of-plane by a self-assembly process. The consequent de-coupling from the substrate allows improved Q (from 4 to 20) and frequency of maximum Q (from 0.5 GHz to 3 GHz) on low resistivity silicon substrates.
Microwave Symposium Digest, 2001 IEEE MTT-S International (Volume:1 )
Date of Conference: 20-24 May 2001