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Evaluation of performance and perspectives of nanocrystal flash memories based on 3D quantum modeling

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2 Author(s)
Coli, P. ; Dipt. di Ingegneria dell''Informazione, Pisa Univ., Italy ; Iannaccone, G.

In this paper we evaluate, from a quantitative point of view, the electrical properties of nanocrystal flash memories, in which the floating gate of conventional flash-EEPROMs is replaced with a layer of silicon nanocrystals. We have developed a three-dimensional solver of the Poisson-Schrodinger equation based on density functional theory, with the local density approximation. In this paper we focus on the stationary electric behavior of the memory devices, focusing on the effect of nanocrystal size and density, and providing a first estimate of the effect of randomness in the nanocrystal layer

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Nanotechnology, 2001. IEEE-NANO 2001. Proceedings of the 2001 1st IEEE Conference on

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