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Fabrication and thermal-chemical stability of magnetoresistive random-access memory cells using α-Fe2O3 bottom spin valves

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7 Author(s)
S. Bae ; Dept. of Electr. & Comput. Eng., Minnesota Univ., Minneapolis, MN, USA ; S. Zurn ; W. F. Egelhoff ; P. J. Chen
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This paper discusses fabrication, stability and device characteristics of Si/α-Fe2O3 (25 nm)/Co (3 nm)/Cu (2.3 nm)/Co (3.1 nm)Ta2O5 (2.5 nm) giant magnetoresistance (GMR) spin-valve magnetoresistive random-access memory (MRAM) cells 6 μm wide and 18 μm long dimension. Fabricated single-bit and 3×3-bit MRAM cells had very good GMR performance for MRAM characteristics and excellent endurance in undergoing standard high-temperature semiconductor processes. The high thermal, and chemical stability of α-Fe2O3 bottom GMR spin valves is mainly attributed to the good thermal stability associated with the high blocking temperature (about 390°C) and the good corrosion resistance of the α-Fe2O3 antiferromagnetic material. In this paper, models for an individual α-Fe2O3 bottom GMR spin-valve MRAM cell using SPICE device model elements are introduced for the first time. The SPICE model is useful for predicting the MRAM device characteristics related to the speed and power dissipation in different MRAM bit arrays and under various operating conditions

Published in:

IEEE Transactions on Magnetics  (Volume:37 ,  Issue: 6 )