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Base oxide scaling limit of thermally-enhanced remote plasma nitridation (TE-RPN) process for ultra-thin gate dielectric formation

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13 Author(s)
Yu, M.C. ; Taiwan Semicond. Manuf. Co., Hsin-Chu, Taiwan ; Huang, H.T. ; Chen, C.H. ; Wang, M.F.
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We investigate the scaling limit of base oxides treated by thermally-enhanced remote plasma nitridation (TE-RPN) for ultra-thin gate dielectric formation. Under optimized RPN conditions, this work shows gate-dielectric equivalent thickness (EOT) scalability and no transconductance degradation are characteristic of processes with base oxide thickness down to 17 Å. Thinner base oxides result in reduced EOT scalability and transconductance degradation, resulting in ~14 Å manufacturable EOT limit for TE-RPN gate dielectrics

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Semiconductor Manufacturing Symposium, 2001 IEEE International

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