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Control of FSG/SiO2 interlayer conditions to prevent Al-wiring delamination caused by F accumulation at Ti/SiO2

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8 Author(s)
Y. Kawashima ; ULSI Device Dev. Div., NEC Corp., Kanagawa, Japan ; T. Ichikawa ; N. Nakamura ; B. Kawano
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The optimum conditions of a fluorinated silica glass/SiO2 (FSG/SiO2) interlayer were investigated for preventing Al-wiring delamination. TiFx formation by F atoms transported from the FSG film to the Ti/SiO2 interface during the metallization process induced the delamination. Correlation between the Al-wiring delamination and F concentration at Ti/SiO2 was demonstrated by a 3-D mapping of F concentrations at Ti/SiO2 with various thickness of SiO2 film and F content in the FSG film. Some treatments of the FSG/SiO2 interlayer to reduce F accumulation at Ti/SiO2 were also examined. It was revealed that more than 4500-Å thickness and strain relaxation of the compressive SiO2 film were effective for F reduction at Ti/SiO2. On the other hand, F concentration at Ti/SiO2 was independent of F content in the FSG film in the range of 2-5 %. F content in FSG film should be kept as much as possible, that is, 4-5 % not to increase the capacitance between adjacent metal lines. The Al-wiring delamination was prevented by introducing these parameters of the FSG/SiO2 interlayer into the fabrication line

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Semiconductor Manufacturing Symposium, 2001 IEEE International

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