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Nitrogen implanted polysilicon resistor for high-voltage CMOS technology application

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6 Author(s)
Chung-Hui Chen ; Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan ; Yean-Kuen Fang ; Chih-Wei Yang ; Ta-Wei Wang
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A nitrogen-implanted polysilicon thin film resistor has been proposed to improve the electrical characteristics of resistors in high-voltage CMOS technologies. The SIMS profile shows the proposed nitrogen-implanted polysilicon resistor can raise 100 times of the concentration of nitrogen. Thereby, the temperature coefficient of resistance (TCR), voltage coefficient of resistance (VCR), and mismatch are improved 20.4%, 35.9%, and 23.5% in average, respectively. The improvements are attributed to the suppression of both hydrogen intrusion by the presence of high-nitrogen concentration in polysilicon.

Published in:

Electron Device Letters, IEEE  (Volume:22 ,  Issue: 11 )