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A 1.0-V 230-MHz column access embedded DRAM for portable MPEG applications

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19 Author(s)
Tomishima, S. ; Mitsubishi Electr. Corp., Hyogo, Japan ; Tsuji, T. ; Kawasaki, T. ; Ishikawa, M.
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This paper describes a 32-Mb embedded DRAM macro fabricated using 0.13-μm triple-well 4-level Cu embedded DRAM technology, which is suitable for portable equipment of MPEG applications. This macro can operate 230-MHz random column access even at 1.0-V power supply condition. The peak power consumption is suppressed to 198 mW in burst operation. The power-down standby mode, which suppresses the leakage current consumption of peripheral circuitry, is also prepared for portable equipment. With the collaboration of array circuit design and the fine Cu metallization technology, macro size of 18.9 mm2 and cell efficiency of 51.3% are realized even with dual interface and triple test functions implemented

Published in:

Solid-State Circuits, IEEE Journal of  (Volume:36 ,  Issue: 11 )

Date of Publication:

Nov 2001

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