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Operating characteristics of single-quantum-well AlGaAs/GaAs high-power lasers

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7 Author(s)
D. K. Wagner ; McDonnell-Douglas Astronautics Co., Elmsford, NY, USA ; R. G. Waters ; P. L. Tihanyi ; D. S. Hill
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The operating characteristics of six types of graded-index separate confinement heterostructure single-quantum-well wide-stripe lasers grown by metalorganic chemical vapor deposition are reported. The lasers exhibited intrinsic mode losses as low as 3 cm-1 and internal quantum efficiencies near unity. Measured differential gain coefficients range from 3.7 to 6.5 cm/A, and extrapolated transparency current densities range from 54 to 145 A/cm2. These wide-stripe lasers are typically multilongitudinal mode and exhibit narrowing of the gain envelope and lateral far-field pattern as the cavity length increases. The high value of T0(>200 K) at long cavity lengths in conjunction with the low current density permits junction-side-up operation to CW optical powers of 0.5-0.7 W/facet, at which level catastrophic facet damage occurs on the uncoated devices. A maximum power conversion efficiency of 57% was measured on the laser structure exhibiting the lowest threshold current

Published in:

IEEE Journal of Quantum Electronics  (Volume:24 ,  Issue: 7 )