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Evaluation of MOSFETs and IGBTs for pulsed power applications

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2 Author(s)
Hickman, B.C. ; Lawrence Livermore Nat. Lab., Berkeley, CA, USA ; Cook, E.G.

Summary form only given as follows. Single solid-state devices or arrays of solid-state devices are being incorporated into many pulsed power applications as a means of generating fast, high-power, high repetition-rate pulses and ultimately replacing hard tubes and thyratrons. While vendors' data sheets provide a starting point for selecting solid-state devices, most data sheets do not have sufficient information to determine performance in a pulsed application. To obtain this relevant information, MOSFETs and IGBTs from a number of vendors have been tested to determine rise times, fall times and current handling capabilities. The emphasis is on the evaluation of devices that can perform in the range of 100 ns pulse widths and the test devices must be capable of switching 1000 volts or greater at a pulsed current of at least 25 amperes. Additionally, some devices were retested with a series magnetic switch to evaluate the effects on switching parameters and specifically rise times. All devices were evaluated under identical conditions and the complete test results are presented.

Published in:

Pulsed Power Plasma Science, 2001. IEEE Conference Record - Abstracts

Date of Conference:

17-22 June 2001

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