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Single event upset test results on a prescaler fabricated in IBM's 5HP silicon germanium heterojunction bipolar transistors BiCMOS technology

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8 Author(s)
Reed, R.A. ; NASA Goddard Space Flight Center, Greenbelt, MD, USA ; Marshall, P.W. ; Ainspan, H. ; Marshall, C.J.
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This paper presents heavy ion and proton single event upset (SEU) test results on a IBM designed high-speed prescaler fabricated in the SiGe HBT BiCMOS process. These are the first published SEU results on this technology

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Radiation Effects Data Workshop, 2001 IEEE

Date of Conference: