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Total-dose and single-event-upset (SEU) resistance in advanced SRAMs fabricated on SOI using 0.2 μm design rules

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7 Author(s)
Hirose, K. ; Inst. of Space & Astronaut. Sci., Kanagawa, Japan ; Saito, H. ; Akiyama, M. ; Arakaki, M.
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We measured total-dose and single-event-upset (SEU) resistance in advanced 128-Kbit SRAMs fabricated on SOI using 0.2 μm design rules. Our results indicate that the 128-Kbit SRAMs can be used in specific space technologies

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Radiation Effects Data Workshop, 2001 IEEE

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