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The early history of IBM's SiGe mixed signal technology

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2 Author(s)
D. L. Harame ; IBM Corp., Essex Junction, VT, USA ; B. S. Meyerson

The history of Silicon Germanium (SiGe) at IBM is a story of persistence. The program began with an idea to replace a conventional implantation step, used in every silicon semiconductor bipolar process, by growing an in-situ doped alloy (SiGe). Many people thought the idea was of value only for a few exotic niche “research” applications. This is a story about how a small group of people persuaded a large digital computer manufacturer to invest in a new unproven technology for telecommunication applications in a field which the company knew little about. It is a success story, as SiGe technology has now become the only BiCMOS technology in development in IBM and is in the roadmaps of every major telecommunication company

Published in:

IEEE Transactions on Electron Devices  (Volume:48 ,  Issue: 11 )