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High-performance implanted base silicon bipolar technology for RF applications

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7 Author(s)
Bock, J. ; Infineon Technol., Munich, Germany ; Knapp, H. ; Aufinger, K. ; Meister, T.F.
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A 0.4 μm silicon bipolar technology for mixed digital/analog RF-applications is described. Without increasing the process complexity in comparison to current production technologies transit frequencies of 52 GHz, maximum oscillation frequencies of 65 GHz and minimum noise figures of 0.7 and 1.3 dB at 3 and 6 GHz are achieved. Emitter-coupled logic (ECL) ring oscillators have a minimum gate delay of 12 ps, the low power capability of the technology is proven by a current-mode logic (CML) power delay product of 5.2 fJ and a dynamic frequency divider operates up to 52 GHz. These results demonstrate the suitability of this technology for mobile communications up to at least 6 GHz and for high-speed optical data links at 10 Gbit/s and above

Published in:

Electron Devices, IEEE Transactions on  (Volume:48 ,  Issue: 11 )

Date of Publication:

Nov 2001

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