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History and future perspective of the modern silicon bipolar transistor

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1 Author(s)
Ning, T.H. ; IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA

A brief historical account of the development of advanced silicon bipolar transistors (SBTs) at IBM Research is described, with a focus on discussing the technical merits of the directions taken. A perspective on the future of silicon bipolar is given, including a discussion on the merits of SiGe-base transistors, and on the scaling limits of both Si-base and SiGe-base transistors. An apples-to-apples comparison of SiGe-base transistors and GaAs HBTs is made, showing that GaAs HBTs are inherently faster and more scaleable than SiGe-base transistors

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Electron Devices, IEEE Transactions on  (Volume:48 ,  Issue: 11 )