By Topic

Performance of 3-D architecture silicon sensors after intense proton irradiation

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
S. I. Parker ; Lawrence Berkeley Lab., CA, USA ; C. J. Kenney

Silicon detectors with a three-dimensional architecture, in which the n- and p-electrodes penetrate through the entire substrate, have been successfully fabricated. The electrodes can be separated from each other by distances that are less than the substrate thickness, allowing short collection paths, low depletion voltages, and large current signals from rapid charge collection. While no special hardening steps were taken in this initial fabrication run, these features of three dimensional architectures produce an intrinsic resistance to the effects of radiation damage. Some performance measurements are given for detectors that are fully depleted and working after exposures to proton beams with doses equivalent to that from slightly more than ten years at the B-layer radius (50 mm) in the planned Atlas detector at the Large Hadron Collider at CERN

Published in:

IEEE Transactions on Nuclear Science  (Volume:48 ,  Issue: 5 )