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Low-power phototransceiver arrays with vertically integrated resonant-cavity LEDs and heterostructure phototransistors

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5 Author(s)
Weidong Zhou ; Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA ; Pradhan, S. ; Bhattacharya, P. ; Liu, W.K.
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Low-power phototransceivers and phototransceiver arrays, with vertically integrated high-gain heterojunction phototransistors (HPTs) and resonant-cavity light-emitting diodes (RCLEDs), are demonstrated. A tunnel junction was used as a low resistance interconnect between the two devices. The input and output wavelengths are 0.63-0.85 and 0.98 μm, respectively. The phototransceiver exhibits an optical gain of 13 dB and power dissipation of 400 μW for an input power of 5 μW. The phototransceiver arrays demonstrate good uniformity, low optical crosstalk, and imaging capabilities.

Published in:

Photonics Technology Letters, IEEE  (Volume:13 ,  Issue: 11 )