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InGaN-GaN multiple quantum-well (MQW) light-emitting diodes (LEDs) with InGaN current-spreading layer were grown by metal-organic vapor-phase epitaxy (MOVPE) and their characteristics were evaluated by current-voltage (I-V), as well as output power measurements. Experimental results indicate that the LEDs exhibited a higher output power and a lower operation voltage than that of conventional LEDs. The external quantum efficiency of InGaN-GaN MQW LEDs for bare chips operated at injection current of 20 mA with InGaN current spreading layer near 5%. This is two times higher than that of conventional LEDs. This could be tentatively attributed to the better current-spreading effect resulting from Si-doped In/sub 0.18/Ga/sub 0.82/N wide potential well in which electron states are not quantized.